Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature?
نویسندگان
چکیده
منابع مشابه
Micrometer-scale ballistic transport in encapsulated graphene at room temperature.
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the us...
متن کاملBallistic Transport at Uniform Temperature
A paradigm for isothermal, mechanical rectification of stochastic fluctuations is introduced in this paper. The central idea is to transform energy injected by random perturbations into rigid-body rotational kinetic energy. The prototype considered in this paper is a mechanical system consisting of a set of rigid bodies in interaction through magnetic fields. The system is stochastically forced...
متن کاملRoom-temperature ballistic transport in III-nitride heterostructures.
Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the sh...
متن کاملRoom-Temperature Ballistic Nanodevices
One of the most important physical parameters to describe the quality of a piece of semiconductor material is the electron scattering length le. Also referred to as the mean-free path, it stands for the average distance between the randomly distributed scatterers in the material, such as lattice defects, impurities, and phonons. The electron mean-free path is typically a few nanometers (1 nm = ...
متن کاملMultiwalled carbon nanotubes are ballistic conductors at room temperature
Following the experiments of Frank et al. [1], which demonstrated quantum transport in multiwalled carbon nanotubes, there have been several experiments that appear to contradict the main conclusion of that paper, which is that the transport of a MWNT at room temperature is ballistic. Here we demonstrate that the intrinsic resistance of cleanarc-produced carbon nanotubes is at most 200Ω/μm, whi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2004
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.93.246803